Spectroscopic Study of Ytterbium in Amorphous Silicon Nitride

Leiden Repository

Spectroscopic Study of Ytterbium in Amorphous Silicon Nitride

Type: Bachelor thesis
Title: Spectroscopic Study of Ytterbium in Amorphous Silicon Nitride
Author: Haan, Jimi de
Issue Date: 2017-07-31
Keywords: Ytterbium
Silicon Nitride
Photoluminescence
Spectroscopy
Quantum Memory
Abstract: We investigated the largely unknown spectroscopic properties silicon nitride implanted with trivalent ytterbium ions. We found that annealing the implanted silicon nitride samples is essential to see the characteristic 980 nm Yb3+ peak in the photoluminescence spectrum. We also notice that the peak we measured in our spectrum is redshifted by 5 nm compared to other host materials, which is to be expected. Additionally, in our spectrum we measure a background that seems to be intrinsic to the host material or due to implantation damage, yet the exact cause is still to be found. We also estimated the density of excited Yb3+ in our samples which differed two orders of magnitude from our Yb implantation density which we deem a realistic result.
Supervisor: Löffler, Wolfgang
Faculty: Faculty of Science
Department: Physics (Bachelor)
Specialisation: Physics
ECTS Credits: 3
Handle: http://hdl.handle.net/1887/50806
 

Files in this item

Description Size View
application/pdf Thesis 2.398Mb View/Open

This item appears in the following Collection(s)